H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/02 (2006.01) H01L 21/368 (2006.01)
Patent
CA 2360057
The present invention relates to a method for reproducibly forming a predetermined quantum dot structure and a device produced using same. A crystal facet of a substrate base is patterned for providing a predetermined portion of the crystal facet for subsequent predetermined crystal growth. A first growth material is deposited for crystallographically growing a predetermined mesa structure on the predetermined portion of the crystal facet. The mesa structure, which is a portion of the quantum dot structure, comprises predetermined low index side facets and a predetermined top surface. A second growth material for forming at least a quantum dot on the mesa structure is then deposited. The number, the lateral dimensions and the location of the at least a quantum dot is determined by the mesa structure. A sufficient amount of the second growth material is deposited such that a sufficient thickness for Straski- Krastinow growth of the second growth material on the top surface of the mesa structure is exceeded. The at least a quantum dot is embedded by continuing crystal growth on the mesa structure. The method allows reproducible manufacture of predetermined quantum dot structures such as single photon sources. For example, a covering structure is crystallographically grown in- situ on the mesa structure wherein the covering structure comprises crystal facets forming a mirror. The covering structure then forms together with the mesa structure and a reflector of the substrate base a micro-cavity providing a single photon laser.
Aers Geoffrey C.
Fraser Jeffrey W.
Lacelle Charles
Lefebvre Jacques
Poole Philip
Freedman & Associates
National Research Council Of Canada
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