C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/04 (2006.01) B23B 51/02 (2006.01) C23C 16/04 (2006.01) C23C 16/26 (2006.01)
Patent
CA 2072326
60SD00544 METHOD FOR SELECTIVE CVD DIAMOND DEPOSITION ABSTRACT OF THE DISCLOSURE Broadly, the present invention is directed to a method for the selective deposition of chemical vapor deposition (CVD) diamond on a surface of a substrate. The method comprises the steps of masking an area of said surface not to be coated with CVD diamond with a coating material that prevents CVD diamond formation. The substrate then is subjected to a CVD diamond deposition process for coating a layer of CVD diamond on the substrate in the unmasked areas only. Advantageously, the surface first is coated with a layer of material that promotes CVD diamond formation and then the coated substrate is subjected to the masking step of the method. Advantageously, the substrate comprises a twist drill wherein the surfaces perpendicular to the main shear planes involved in drilling, such as the planes forming the cutting edge of the drill, are coated with CVD diamond while the remaining areas of the twist drill remain uncoated.
Company General Electric
Craig Wilson And Company
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