Method for selective etching of titaniumdioxide

Details Method for selective etching of titaniumdioxide Method for selective etching of titaniumdioxide

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B08B 3/08 (2006.01) B08B 3/10 (2006.01) B44C 1/22 (2006.01) H01L 21/311 (2006.01) H01L 21/316 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1091139

ABSTRACT A method of selectively etching a titanium oxide layer with a view to the formation of a mask for the locali- zation of the anodic oxidation of an underlying metallic layer. The method is characterized in that the material com- prising the said titanium oxide layer is dipped in a solution of hydrogen peroxide and ammonia. Application to the for- mation of contacts on semiconductor devices.

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