H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/176, 345/26,
H01L 21/268 (2006.01) H01L 21/18 (2006.01) H01L 21/225 (2006.01) H01L 21/263 (2006.01) H01L 29/205 (2006.01)
Patent
CA 1277439
ABSTRACT A multilayer semiconductor structure, formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally modified, such that the distinction between the different original materials is lost, at least partially. This intermixing process employs irradiation with a pulsed or rapidly scanned laser or electron beam, generally at ambient conditions of temperature and pressure, at energy levels which avoid physical damage to the layered structure. The intermixing may be more complete when multiple pulses from the laser or electron beam are employed.
548660
Jain Ravinder K.
Moretti Anthony L.
Ralston John D.
Amoco Corporation
Gowling Lafleur Henderson Llp
Jain Ravinder K.
Moretti Anthony L.
Ralston John D.
LandOfFree
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