Method for selectively covering a micro machined surface

Details Method for selectively covering a micro machined surface Method for selectively covering a micro machined surface

H - Electricity

01

L

H01L 23/00 (2006.01) B81B 3/00 (2006.01) B81C 1/00 (2006.01)

Patent

CA 2498669

On a die that has etchings on a surface, firstly a sheet of negative photoresist is laid down which, by means of an exposure and subsequent development, is left only above the etchings; then, upon the negative photoresist, a positive photoresist is applied, which is subjected to exposure and development to produce functional geometries deposited in thin film; subsequently the positive photoresist is removed in a ~lift-off~ operation, and the negative photoresist is taken off in a plasma operation, thus revealing the etchings.

Sur une matrice gravée sur une surface, on applique d'abord une pellicule de photorésist négatif, laquelle n'est laissée, par exposition et développement ultérieur, que sur les zones de gravure. On applique ensuite sur le photorésist négatif, un photorésist positif exposé et développé pour produire des géométries fonctionnelles déposées dans une couche mince. On enlève ensuite le photorésist positif dans une opération d'arrachement, puis le photorésist négatif dans une opération au plasma, les zones de gravures étant ainsi révélées.

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