Method for sputtering a pin amorphous silicon semi-...

Details Method for sputtering a pin amorphous silicon semi-... Method for sputtering a pin amorphous silicon semi-...

H - Electricity

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356/176, 345/22

H01L 31/18 (2006.01) H01L 21/203 (2006.01) H01L 29/04 (2006.01) H01L 29/868 (2006.01) H01L 31/0392 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1215456

ABSTRACT OF THE DISCLOSURE A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystaline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting en- hanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down proce- dure.

461877

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