Method for sputtering a pin microcrystalline/ amorphous...

H - Electricity – 01 – L

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356/176, 345/22,

H01L 31/18 (2006.01) C23C 14/14 (2006.01) H01L 21/203 (2006.01) H01L 29/04 (2006.01) H01L 29/868 (2006.01)

Patent

CA 1207878

ABSTRACT OF THE DISCLOSURE A silicon PIN amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi- transparent ohmic electrode.

461876

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