H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/176, 345/22,
H01L 31/18 (2006.01) C23C 14/14 (2006.01) H01L 21/203 (2006.01) H01L 29/04 (2006.01) H01L 29/868 (2006.01)
Patent
CA 1207878
ABSTRACT OF THE DISCLOSURE A silicon PIN amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi- transparent ohmic electrode.
461876
Maruska H. Paul
Moustakas Theodore D.
Borden Ladner Gervais Llp
Exxon Research And Engineering Company
LandOfFree
Method for sputtering a pin microcrystalline/ amorphous... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for sputtering a pin microcrystalline/ amorphous..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for sputtering a pin microcrystalline/ amorphous... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1280452