H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/0236 (2006.01) C25F 3/12 (2006.01) H01L 21/306 (2006.01) H01L 21/3063 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2718397
This invention relates to a method for texturing a silicon surface and silicon wafers made by the method, where the method comprises immersing the wafers in an alkaline solution at pH > 10, and applying a potential difference between the wafer and a platinum electrode in the electrolyte in the range of + 10 to + 85 V.
La présente invention concerne un procédé pour texturer une surface de silicium et des plaquettes de silicium produites par le procédé. Le procédé comprend limmersion des plaquettes dans une solution alcaline ayant un pH > 10 et lapplication dune différence de potentiel entre la plaquette et une électrode en platine dans lélectrolyte se situant dans la plage de + 10 à + 85 V.
Lommasson Timothy C.
Olefjord Ingemar
Norut Narvik As
Robic Robic & Associes/associates
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