Method for the chemical vapour infiltration of a material...

Details Method for the chemical vapour infiltration of a material... Method for the chemical vapour infiltration of a material...

C - Chemistry, Metallurgy

04

B

C04B 35/84 (2006.01) C04B 35/571 (2006.01) C04B 35/80 (2006.01)

Patent

CA 2217702

Infiltration is carried out within a porous substrate at a temperature no higher than 1050 ~C, and the gas phase contains a gaseous precursor of the material to be infiltrated as well as hydrogen chloride (HCl), the proportion by volume thereof relative to the gaseous precursor of silicon (e.g. methyltrichlorosilane) and/or boron, e.g. BCl3, preferably being of at least 25 %.

L'infiltration est réalisée au sein d'un substrat poreux à une température au plus égale à 1050 ·C et la phase gazeuse contient un précurseur gazeux du matériau à infiltrer et du chlorure d'hydrogène (HCl), la proportion en volume de celui-ci par rapport au précurseur gazeux du silicium (par exemple du méthyltrichlorosilane) et/ou du bore, par exemple BCl¿3? étant de préférence au moins égale à 25 %.

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