Method for the epitaxial deposition of several layers

Details Method for the epitaxial deposition of several layers Method for the epitaxial deposition of several layers

H - Electricity

01

L

356/178

H01L 21/36 (2006.01) C30B 19/06 (2006.01)

Patent

CA 1123967

7-9-1978 1 PHN 8934 "ABSTRACT" "Method for the epitaxial deposition of several layers". A method of manufacturing a device comprising a monocrystalline substrate and several epitaxial layers deposited on the substrate, the substrate being successi- vely contacted with solutions which are previously brought to the saturated state by contact with an auxiliary sub- strate and the substrate with the solutions and the auxi- liary substrate is cooled and the layers are successively deposited, characterized in that the epitaxial deposition comprises four phases of which in the first phase of the epitaxial process a first solution is contacted with a first auxiliary substrate, in the second phase the first solution is contacted with a second auxiliary substrate and simultaneously a second solution is contacted with the first auxiliary substrate, in the third phase the first solution is contacted with the substrate and simul- taneously the second solution is contacted with the se- cond auxiliary substrate, and in the fourth phase the second solution is contacted with the substrate.

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