H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/441 (2006.01) H01L 21/363 (2006.01) H01L 31/0296 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2691506
A method for the formation of a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film comprising the steps of depositing a layer of As2Te3 on the CdTe layer at a substrate temperature comprised between ambient temperature and 200°C; depositing a layer of Cu on the As2Te3 layer; bringing at least the deposited Cu layer to a temperature comprised between 150° and 250°C. The method is used to form a stable back-contact on CdTe/CdS thin film solar cells.
Procédé de formation d'un contact ohmique non-redresseur sur un film mince en CdTe à semi-conducteurs de type p comprenant les étapes consistant à déposer une couche de As2Te3 sur la couche de CdTe à une température de substrat comprise entre la température ambiante et 200° C; déposer une couche de Cu sur la couche de As2Te3; amener au moins la couche de Cu déposée à une température comprise entre 150° et 250° C. Le procédé est utilisé pour former un contact arrière stable sur des cellules solaires à films minces en CdTe/CdS.
Bosio Alessio
Romeo Alessandro
Romeo Nicola
Fetherstonhaugh & Co.
Solar Systems & Equipments S.r.l.
LandOfFree
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