H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/0216 (2006.01)
Patent
CA 2679685
In a method for producing a solar cell (20) from a silicon substrate (4), a first anti-reflective layer (2, 5) having an optical refraction index n between 3.6 and 3.9 is first applied to the front and back. Then a second anti-reflective layer (1, 6) having an optical refraction index n between 1.94 and 2.1 is applied thereon. The anti-reflective layers (1, 2, 5, 6) are severed down to the silicon substrate (4) underneath in order to insert metal contacts (7, 9) to the silicon substrate (4) therein.
L'invention concerne un procédé de fabrication d'une cellule solaire (20). Sur la face avant et la face arrière d'un substrat en silicium (4), on applique d'abord une première couche anti-réflexion (2, 5) ayant un indice de réfraction optique n compris entre 3,6 et 3,9. On applique sur cette couche une deuxième couche anti-réflexion (1, 6) ayant un indice de réfraction optique n compris entre 1,94 et 2,1. Les couches anti-réflexion (1, 2, 5, 6) sont sectionnées jusqu'au substrat en silicium (4), pour amener des contacts métalliques (7, 9) jusqu'au substrat en silicium (4).
Habermann Dirk
Muller Patrik
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
Schmid Technology Systems Gmbh
LandOfFree
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