Method for the manufacture of lasers with tapered guide region

H - Electricity – 01 – S

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H01S 5/10 (2006.01) G02B 6/122 (2006.01) G02B 6/12 (2006.01)

Patent

CA 2249398

The laterally tapered active region (3, 3a) is obtained by means of photolithography techniques, in two successive steps, by overlaying the images of a first and a second mask (5, 6) each presenting a chamfer whose inclination corresponds to the inclination of one of the sides of the tapered region (3a).

On obtient une région active biseautée (3, 3a) à l'aide de techniques de photolithographie, en deux étapes successives, en superposant les images d'un premier et d'un second masque (5, 6) dont chacune présente un chanfrein dont l'inclinaison correspond à celle de l'un des côtés de la partie en biseau (3a).

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