Method for the manufacture of light emitting and/or...

Details Method for the manufacture of light emitting and/or... Method for the manufacture of light emitting and/or...

H - Electricity

01

L

345/17, 345/50

H01L 21/30 (2006.01) H01L 31/032 (2006.01) H01L 31/12 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1142250

ABSTRACT OF THE DISCLOSURE A method for the manufacture of light emitting and/or photodetective diodes, which comprises the following operations: a) providing a semiconductor MgxZnl-xTe substrate, b) treating the substrate to incorporate a doping element therein, c) applying a layer of conductive material to the substrate and treating the applied layer to create a compensated layer having high resistivity in the substrate, d) implanting ions on a first face of the compensated semiconductor substrate with sufficient energy to create two zones therein, a trapping zone in the semiconductor surface having a thickness less than the layer of high resistivity material, and in insu- lating zone above the trapping zone, e) forming conductive contacts on a second face of the substrate.

329413

Affiliated with

Also associated with

Rating

Method for the manufacture of light emitting and/or... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the manufacture of light emitting and/or..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the manufacture of light emitting and/or... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-965130