Method for the manufacture of metal silicide layers by means...

Details Method for the manufacture of metal silicide layers by means... Method for the manufacture of metal silicide layers by means...

C - Chemistry, Metallurgy

23

C

117/85, 204/96.3

C23C 16/42 (2006.01) C23C 16/455 (2006.01) H01L 21/285 (2006.01)

Patent

CA 1238822

ABSTRACT OF THE DISCLOSURE A method for the deposition of a silicide layer of a high melting metal onto a substrate of silicon or silicon dioxide wherein reaction gases consisting of a decomposable silicon- containing compound, a hydrogen halide and a metal halide are pyrolytically decomposed in a reaction zone to form a reaction mixture from which a metal silicide is deposited on the substrate at reduced pressures. During the decomposition of the gases and deposition of the metal silicide, the gas pressure in the reaction zone is maintained between 1.3 x 10-3 to 5 x 10-2 mbar. This type of pressure is most conveniently maintained by means of a turbomolecular pump.

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