G - Physics – 03 – G
Patent
G - Physics
03
G
117/23.3
G03G 5/082 (2006.01) H01L 31/0392 (2006.01) H01L 31/20 (2006.01)
Patent
CA 1251694
-i- METHOD FOR THE MANUFACTURE OF PHOTOCONDUCTIVE INSULATING ELEMENTS WITH A BROAD DYNAMIC EXPOSURE RANGE ABSTRACT OF THE DISCLOSURE An improved method for the manufacture of a photoconductive insulating element comprising an electrically-conductive support, a barrier layer overlying the support, and a layer of doped hydrogenated amorphous silicon overlying the barrier layer, wherein the doped layer is formed by a process of plasma-induced dissociation of a gaseous mixture of a silane and a doping agent, and the dissociation is a temperature-controlled process in which deposition of a final portion of the doped layer is carried out at a temperature which is less than the temperature used in forming the initial portion of the doped layer. Control of the temperature of the deposition process in this manner provides a substantial increase in the dynamic exposure range of the element.
482716
Borden Ladner Gervais Llp
Eastman Kodak Company
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