Method for the manufacture of resist structures using short...

Details Method for the manufacture of resist structures using short... Method for the manufacture of resist structures using short...

G - Physics

03

F

96/150

G03F 7/26 (2006.01) G03F 7/039 (2006.01) G05F 1/577 (2006.01)

Patent

CA 1176902

ABSTRACT OF THE DISCLOSURE The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to dev- elop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave- length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan sub- stituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 µm thick by means of UV rays in the wave-length range between about 180 to 260 nm.

386772

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