Method for the manufacture of semiconductor device using...

Details Method for the manufacture of semiconductor device using... Method for the manufacture of semiconductor device using...

H - Electricity

01

L

356/177

H01L 21/302 (2006.01) H01L 21/033 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1200624

ABSTRACT OF THE DISCLOSURE A semiconductor manufacturing method which uses a refractory metal as a lift-off material and employs, in combination, a dry etching process suitable for forming a miniature pattern without undercutting and a film deposition method for deposing the lift-off material with directionality in a direction perpendicular to the substrate surface. A semiconductor device is fabricated by a lift-off method which is free from the risk of contamination, permits easy lift off of the lift-off material, even if large in area, and hence is suitable for the formation of a high-density pattern.

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