Method for the preparation and passivation of the end...

Details Method for the preparation and passivation of the end... Method for the preparation and passivation of the end...

H - Electricity

01

S

H01S 5/028 (2006.01) H01S 3/18 (1995.01)

Patent

CA 2148655

The present invention relates to a process for the treatment of the facets of a semiconductor laser, capable of inhibiting their degradation during the high power operation and to the relative laser device. The invention provides for a process to be carried out in high vacuum condition, capable of removing contaminants and the products of reaction between the atmosphere and the constituents of the semiconductor laser. At the same time, a process of hydrogen diffusion leading to passivation (inactivation) of deep electron energy levels, responsible for various undesired processes of non-radiative recombination, is carried out. Moreover, a protective dielectric layer capable of preventing the contact between the semiconductor surface and the atmosphere is applied.

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