C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/48 (2006.01) A61B 17/86 (2006.01) A61C 8/00 (2006.01) A61F 2/30 (2006.01) A61L 27/30 (2006.01) A61F 2/00 (2006.01)
Patent
CA 2444479
The method involves ionic implantation of controlled amounts of elements such as CO, C or O in endo-osseous implants or prosthesis made of metals, metal alloys or biocompatible compound materials. This surface treatment provokes changes in the characteristics of the surface of endo-osseous implants or prosthesis significantly increasing the degree of osseous integration.
La méthode de la présente invention comprend l'implantation ionique de quantités contrôlées d'éléments, tels que CO, C ou O, dans des implants endo-osseux ou des prothèses fabriqués à partir de métaux, d'alliages de métaux ou de matériaux composés biocompatibles. Ce traitement superficiel entraîne des modification dans les caractéristiques de surface des implants endo-osseux ou des prothèses qui augmentent sensiblement leur degré d'osséointégration.
Alava Marquinez Jose Inaki
Braceras Izaguirre Inigo
de Maeztu Martinez Miguel Angel
Garcia Luis Alberto
Onate de La Presa Jose Ignacio
de Maeztu Martinez Miguel Angel
Fetherstonhaugh & Co.
Fundacion Inasmet
LandOfFree
Method for the production of endo-osseous implants or... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the production of endo-osseous implants or..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the production of endo-osseous implants or... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1677345