B - Operations – Transporting – 82 – B
Patent
B - Operations, Transporting
82
B
B82B 1/00 (2006.01) C30B 23/02 (2006.01) C30B 33/00 (2006.01)
Patent
CA 2444865
According to the invention, parallel atomic lines (4) are formed on the surface of a silicon carbide substrate (2) and a material which can be selectively absorbed between the atomic lines without being absorbed on said atomic lines, is deposited on the surface, whereupon strips (6,8) of said material are created between said atomic lines. The invention is particularly suitable for use in the production of nanostructures having passivated or metallized strips.
Procédé de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procédé. Selon l'invention, on forme des lignes atomiques parallèles (4), à la surface d'un substrat (2) de carbure de silicium, et on dépose sur cette surface une matière capable d'être adsorbée de façon sélective entre les lignes atomiques, sans l'être sur ces lignes atomiques, le dépôt de cette matière engendrant ainsi, entre les lignes atomiques, des bandes (6, 8) de cette matière. L'invention s'applique notamment à la fabrication de nanostructures possédant des bandes passivées ou métallisées.
Aristov Victor
D'angelo Marie
Derycke Vincent
Semond Fabrice
Soukiassian Patrick
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