C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/36 (2006.01) C30B 33/00 (2006.01) H01L 21/02 (2006.01) H01L 21/04 (2006.01) H01L 21/285 (2006.01)
Patent
CA 2444793
The invention concerns a method for treating the surface of a semiconductor material, using in particular hydrogen, and the resulting surface. The invention is characterised in that it consists for example in using hydrogen, in preparing the surface (S) so that it has, on the atomic scale, controlled organisation, and in hydrogenation of said prepared surface, the preparation and hydrogenation of the surface combining to obtain a predefined electric state of the surface. The invention is applicable, in particular in microelectronics, in metallization or passivation of a semiconductor surface.
Procédé de traitement de la surface d'un matériau semiconducteur, utilisant notamment l'hydrogène, et surface obtenue par ce procédé. Selon l'invention, on utilise par exemple l'hydrogène, on prépare la surface (S) pour qu'elle présente, à l'échelle atomique, une organisation contrôlée, et l'on hydrogène la surface ainsi préparée, la préparation et l'hydrogénation de la surface coopérant pour obtenir un état électrique prédéfini de la surface. L'invention trouve des applications, notamment en microélectronique, à la métallisation ou la passivation d'une surface semiconductrice.
Derycke Vincent
Soukiassian Patrick
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