G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 1/00 (2012.01) G03F 1/22 (2012.01)
Patent
CA 2287671
To fabricate a mask for deep ultra-violet lithography, a layer of material opaque to deep ultra-violet radiation, a layer of silicon and a layer of metal are successively deposited on a transparent substrate. A focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound. Finally, the three layers are etched to leave on the substrate only the structure of etch-resistant metal/silicon compound and the layer of material opaque to deep ultra-violet radiation underneath that structure to thereby form a mask for deep ultra-violet lithography. To fabricate a mask for extreme ultra-violet lithography, an etch stop layer, a repair buffer layer, a layer made of extreme ultra-violet radiation absorbent material, a layer of silicon and a layer of metal are successively deposited on a substrate made of extreme ultra-violet reflective material. A focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound. The layer of metal, the layer of silicon, the layer made of extreme ultra-violet absorbent material, and the repair buffer layer are etched to leave on the substrate (a) the structure of etch-resistant metal/silicon compound and (b) the layer made of extreme ultra-violet absorbent material and the repair buffer layer underneath that structure to form the mask for extreme ultra-violet lithography.
Beauvais Jacques
Drouin Dominique
Lavallee Eric
Beauvais Jacques
Bkp Gp
Drouin Dominique
Lavallee Eric
Quantiscript Inc.
LandOfFree
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