Method of aligning edges of emitter and its metalization in...

Details Method of aligning edges of emitter and its metalization in... Method of aligning edges of emitter and its metalization in...

H - Electricity

01

L

356/53

H01L 21/283 (2006.01) H01L 21/00 (2006.01) H01L 21/28 (2006.01) H01L 29/00 (2006.01) H01L 29/74 (2006.01)

Patent

CA 1037613

ABSTRACT OF THE DISCLOSURE In making a thyristor, the outer face of the N-type emitter layer and an adjoining surface of the P-type base layer of a semiconductor wafer are metalized, a limited zone of metal overlapping the edge of the emitter-base junction is removed, and then the entire portion of the emitter layer exposed by the removed metal is etched away.

228434

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