C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/182, 204/96.
C23C 14/08 (2006.01) C23C 14/00 (2006.01) C23C 14/28 (2006.01) C23C 14/40 (2006.01) C23C 14/56 (2006.01) H01B 12/06 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2037432
In order to enable formation of a smooth and dense oxide superconducting film with no clear appearance of grain boundaries in a fine structure even at a high film forming rate, a laser ablation method is employed to apply a laser beam 2 to a target 1 containing components of an oxide superconductive material and deposit particles, which are thus scattered from the target 1, on a substrate 3, while gaseous oxygen is supplied from a gaseous oxygen inlet 7 toward laser plasma 6, which is generated by the application of the laser beam 2.
Pour permettre la formation d'une pellicule d'oxyde supraconductrice lisse et dense n'offrant clairement aucune apparence de joints de grain dans sa structure fine même à un taux feuillogène élevé, on utilise une méthode d'ablation par laser consistant à appliquer un rayon laser (2) sur une cible (1) contenant les composants d'un matériau supraconducteur à oxyde et des particules précipitées, lesquels sont ainsi projetés sur un substrat (3) à partir de la cible (1), tout en fournissant de l'oxygène provenant d'une entrée d'oxygène (7) sur le plasma laser (6) produit par l'application du laser (2).
Hara Tsukushi
Hayashi Noriki
Okaniwa Kiyoshi
Okuda Shigeru
Takano Satoshi
Bereskin & Parr Llp/s.e.n.c.r.l.,s.r.l.
Sumitomo Electric Industries Ltd.
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