C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/182, 204/96.
C23C 16/26 (2006.01) C23C 16/27 (2006.01) C23C 16/458 (2006.01) C23C 16/46 (2006.01) C23C 16/50 (2006.01) C30B 25/12 (2006.01)
Patent
CA 2007780
ABSTRACT OF THE DISCLOSURE The present invention concerns a method of producing a diamond thin film, wherein a plasma-activated gas obtained by exciting a starting material containing a carbon source gas is brought into contact with a surface of a substrate, on which a diamond thin film is to be formed under the presence Or an auxiliary member placed adjacent to a con- vexed portion present at the surface Or the substrate, on which the diamond thin film is to be formed, thereby forming the diamond thin film on the substrate, as well as an apparatus for producing a diamond thin film by means of a micro- wave plasma method, wherein an auxiliary member is placed adjacent to a convexed portion present at the surface or the substrate on which diamond thin film is to be formed.
Hayashi Nariyuki
Ito Toshimichi
Idemitsu Petrochemical Company Limited
Swabey Ogilvy Renault
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