Method of annealing a compound semiconductor substrate

Details Method of annealing a compound semiconductor substrate Method of annealing a compound semiconductor substrate

H - Electricity

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H01L 21/363 (2006.01) H01L 21/314 (2006.01) H01L 21/316 (2006.01) H01L 21/318 (2006.01) H01L 21/324 (2006.01)

Patent

CA 1244560

ABSTRACT OF THE DISCLOSURE An annealing method for activating ion-implanted layers of a compound semiconductor substrate comprises converting gas containing prescribed components into plasma through an electron cyclotron resonance process and producing the same reaction with reactive gas to accumulate reaction products on the surface of the compound semiconductor substrate having the ion-implanted layers thereby to form a protective film and performing heat treatment for activating the ion-implanted layers. The gas N2, O2, NH3 or a gaseous mixture gas thereof.

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