Method of assay using a field effect transistor

Details Method of assay using a field effect transistor Method of assay using a field effect transistor

G - Physics

01

N

324/23

G01N 33/551 (2006.01) G01N 33/543 (2006.01)

Patent

CA 1241695

Abstract Methods of Assay In its broadest aspect, the present invention provides a method of assaying a ligand in a sample which comprises contacting the sample with a predetermined quantity of a specific binding partner to the ligand, said specific binding partner being immobilized on the effective gate electrode of a field effect transistor, and determining whether (and, if desired, the extent to which) an appropriate transistor characteristic is changed as a result of complex formation between the ligand and the specific binding partner.

476608

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