Method of characterizing bistable semiconductor lasers

Details Method of characterizing bistable semiconductor lasers Method of characterizing bistable semiconductor lasers

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G02F 3/00 (2006.01) G02F 3/02 (2006.01) H01S 3/23 (2006.01) H01S 5/06 (2006.01) H01S 5/00 (2006.01) H01S 5/50 (2006.01)

Patent

CA 1321484

ABSTRACT The characteristic parameters of a semiconductor laser, biased to act as an amplifier and optically pumped to bistable operating conditions, are determined. The output power of the laser is measured as a function of the power of an amplitude-modulated optical input signal to determine the laser hysteresis loop; the switching points between the two stable states of the laser are identified, the input and output power values at those points are stored, and at least the value of the non-linear refractive index coefficient of the material used to fabricate the laser is determined from the power value stored in respect of at least one of those points. From the power values for both switching points (P1, P2) the amplification factor, the finesse parameter of the passive cavity of the laser and the wavelength difference between the laser under test and a second laser generating the optical pumping signal can also be determined.

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