C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
149/17
C23F 1/44 (2006.01) C09G 1/02 (2006.01) H01L 21/302 (2006.01) H01L 21/306 (2006.01) H01L 21/48 (2006.01)
Patent
CA 2011709
ABSTRACT OF THE DISCLOSURE Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.
Carr Jeffrey W.
David Lawrence D.
Guthrie William L.
Kaufman Frank B.
Patrick William J.
International Business Machines Corporation
Rosen Arnold
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