C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
149/11, 148/3.4
C23F 1/00 (2006.01) C30B 35/00 (2006.01) H01J 9/12 (2006.01) H01L 21/306 (2006.01)
Patent
CA 1071075
PHB 32512 26.5.1976 ABSTRACT: A method of removing substantially all the carbon contamination from the surface of a body con- sisting of GaAs, GaP, GaInP, InSB, InAs and GaSb. The body is introduced into a vacuum system, and is heated between 550 and 680°C for at least 10 minutes in the presence of water vapour while the pressure in the vacuum system is between 10-5 and 0.5 x 10-6 Torr. The method can remove several monolayers of carbon, the residual carbon after such a cleaning treatment amounting to a few % of a monolayer. The method is particularly suitable for cleaning substrates to be used for making photocathodes or on which a layer is to be deposited by molecular beam epitaxy.
258897
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