Method of coating semiconductor substrates

Details Method of coating semiconductor substrates Method of coating semiconductor substrates

H - Electricity

01

L

204/96.31

H01L 21/56 (2006.01) H01L 21/318 (2006.01)

Patent

CA 1073405

METHOD OF COATING SEMICONDUCTOR SUBSTRATES Abstract of the Disclosure A low-temperature, high-pressure, medium-power process, which utilizes a radio frequency powered radial flow reactor, utilizes only silane and ammonia as the reactant gases for deposition. The methods disclosed result in the deposition on semiconductor wafers of moder- ately high density silicon-nitrogen films which have low tensile stress and good crack resistance. In addition, these films provide good step coverage, good scratch resistance, and in inert barrier to sodium and moisture.

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