Method of contacting semiconductor cathodes and of...

H - Electricity – 01 – J

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313/170, 313/181

H01J 29/92 (2006.01) H01J 1/308 (2006.01)

Patent

CA 1320991

ABSTRACT: "Method of contacting semiconductor cathodes and of manufacturing an electron tube provided with such a cathode" The invention relates to a contact (9) for a semiconductor cathode consisting of one of the metals Ag, Au, Cu (11) and one of the metals Ta, Ti, V (10). Such a contact does not exhibit any degradation when the cathode, after mounting in a vacuum tube, is heated several times to approximately 850°C for cleaning purposes. (Figure 2.)

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