Method of controlling dopant diffusion and dopant electrical...

Details Method of controlling dopant diffusion and dopant electrical... Method of controlling dopant diffusion and dopant electrical...

H - Electricity

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356/176

H01L 21/38 (2006.01) H01L 21/22 (2006.01) H01L 21/265 (2006.01) H01L 21/324 (2006.01) H01L 29/12 (2006.01)

Patent

CA 1245777

METHOD OF CONTROLLING DOPANT DIFFUSION AND DOPANT ELECTRICAL ACTIVATION Abstract Of The Disclosure A method for preparing semiconductor components having a structure with sharply defined spatial distributions of dopant atoms with control over the degree of electrical activation of` the dopant atoms. Control of spatial distribution and the degree of electrical activation of dopant atoms is achieved by implantation of dopant atoms along with rare gas atoms and another type of dopant atom within substantially the same preselected depth boundaries of a silicon or germanium substrate.

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