Method of creating patterned multilayer films for use in...

Details Method of creating patterned multilayer films for use in... Method of creating patterned multilayer films for use in...

G - Physics

03

F

96/256

G03F 7/26 (2006.01) G03F 7/40 (2006.01)

Patent

CA 1282273

METHOD OF CREATING PATTERNED MULTILAYER FILMS FOR USE IN PRODUCTION OF SEMICONDUCTOR CIRCUITS AND SYSTEMS ABSTRACT OF THE DISCLOSURE A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained. The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.

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