Method of depositing conductors in high aspect ratio apertures

Details Method of depositing conductors in high aspect ratio apertures Method of depositing conductors in high aspect ratio apertures

C - Chemistry, Metallurgy

23

C

C23C 14/34 (2006.01) C23C 14/04 (2006.01) H01L 21/768 (2006.01) H05K 3/40 (2006.01)

Patent

CA 2061119

A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.

Pulvérisation par bombardement ionique permettant d'appliquer sur des trous ayant des rapports dimensionnels élevés des dépôts de pellicules conductrices présentant une résistivité et des concentrations d'impuretés faibles et une morphologie ordinaire. Le collimateur utilisé possède un rapport dimensionnel proche de celui des trous, de sorte que l'épaisseur du feuil au fond du trou est au moins deux fois supérieure à celle obtenue avec les méthodes de pulvérisation classiques.

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