C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/182, 204/96.
C23C 14/30 (2006.01) C08J 7/06 (2006.01) C23C 14/06 (2006.01) C23C 14/32 (2006.01) C23C 14/46 (2006.01) C23C 14/54 (2006.01)
Patent
CA 2033568
METHOD OF DEPOSITING DIAMOND-LIKE CARBON FILM ONTO A SUBSTRATE HAVING A LOW MELTING TEMPERATURE ABSTRACT OF THE INVENTION A diamond-like carbon film is deposited on an insulating substrate using a solid carbon source evaporated by an electron beam so as to maintain the substrate temperature below about 150° C in a differentially evacuated chamber containing a selective etchant gas such as hydrogen. In order to bombard the substrate with positively charged ions while preventing accumulation of a repulsive surface charge, a radio frequency (RF) electric field is applied to a rotating fixture holding the substrate. The differentially evacuated chamber maintains the atmospheric pressure around the solid carbon source at one end of the chamber at a sufficiently low pressure to prevent loss of electron beam energy and thereby enable vaporization of the carbon while maintaining the substrate at the other end of the chamber at a higher pressure which enables the RF electric field to excite an ion gas plasma around the substrate and thereby facilitate deposition of the diamond-like carbon film. In the preferred embodiment, the differentially evacuated chamber has a bypass manifold connected between the two ends of the chamber. A control system responding to pressure sensing apparatus inside the chamber governs the position of a butterfly valve in the bypass manifold to regulate the differential pressure in the chamber. In order to keep the substrate temperature below about 150°, the rotating fixture holding the substrate is water-cooled.
Bausch & Lomb Incorporated
Osler Hoskin & Harcourt Llp
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