C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/34 (2006.01) C23C 14/00 (2006.01) C23C 14/08 (2006.01)
Patent
CA 2059525
2059525 9102103 PCTABS00003 A sputtering method is provided in which a substantially transparent target oxide film with predetermined optical properties is prepared having substantially the same degree of absorption per unit thickness as were the process practiced with pure oxygen gas as sole reactant, yet with a rate that is enhanced with respect to the method when oxygen gas is sole reactant. In practicing the inventive method, a target substrate is sputtered in a chamber while providing a source of reactive oxygen. The source of reactive oxygen has a reactivity in forming target oxide that is enhanced with respect to pure oxygen gas and includes nitrous oxide. Target oxide deposited on the substrate has an absorption per unit thickness that is substantially the same absorption per unit thickness as when pure oxygen gas is sole reactant. The deposition rate is preferably controlled by a value derived from plasma emission lines of oxygen atoms and target atoms.
Nadel Steven J.
Van Skike Tamzen L.
Wamboldt Leonard G.
Wolfe Jesse D.
Gowling Lafleur Henderson Llp
The Boc Group Inc.
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