Method of depositing silicon films with reduced structural...

Details Method of depositing silicon films with reduced structural... Method of depositing silicon films with reduced structural...

C - Chemistry, Metallurgy

23

C

117/86

C23C 16/44 (2006.01)

Patent

CA 1256754

-17- ABSTRACT OF THE DISCLOSURE METHOD OF DEPOSITING SILICON FILMS WITH REDUCED STRUCTURAL DEFECTS Silicon films in integrated circuits are mass produced with reduced structural defects by passing a reactant gas which contains silicon over a batch of wafers in a quartz chamber to deposit a silicon substance on both the wafers in a quartz chamber and the quartz walls of the chamber; repeating the passing step on other batches of wafers until the thickness of the silicon substance on the quartz walls exceeds a predetermined limit; directing a forceful stream of gas against the quartz walls to knock microscopic particles of the silicon substance therefrom; removing the knocked-off microscopic particles from the chamber; and continuing the passing and repeating steps with no intervening acid etch of the silicon substance on the quartz walls.

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