C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/24 (2006.01) C03C 17/22 (2006.01) C23C 16/458 (2006.01) C23C 16/513 (2006.01) H01L 21/205 (2006.01) H01L 31/04 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2406210
In a method of depositing a silicon thin film by using a vertical plasma CVD apparatus having steps of holding a substrate (21) having an area not smaller than 1,200 cm2 and having a conductive film (22) formed thereon with a substrate holder (1), disposing the substrate (22) to face an electrode, and depositing a silicon thin film under a power density of 100 mW/cm2 or more, the substrate holder (1) is electrically insulated from the conductive film (22) formed on the surface of the substrate (21) by forming a separation groove (24) in the conductive film (22).
On constitue une couche mince de silicium à une densité de puissance d'au moins 100 mW/cm<2> au moyen d'un dispositif de dépôt de vapeur chimique CVD de plasma vertical comportant un substrat (21) sur lequel est créée une couche conductrice (22) et possédant une surface d'au moins 1200 cm<2>, maintenu sur un support de substrat (1) et placé en face d'une électrode. Une rainure de séparation (24) est pratiquée dans la couche conductrice (22), ce qui permet d'isoler électriquement le support de substrat (1) de la couche conductrice (22) sur la surface du substrat (21).
Kuribe Eiji
Suezaki Takashi
Gowling Lafleur Henderson Llp
Kaneka Corporation
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