Method of deposition

Details Method of deposition Method of deposition

C - Chemistry, Metallurgy

07

F

C07F 1/12 (2006.01) C07F 1/00 (2006.01) C07F 7/22 (2006.01) C07F 15/00 (2006.01) C23C 16/18 (2006.01) G03F 1/08 (2006.01) G03F 7/004 (2006.01) G03F 7/16 (2006.01) G03F 7/20 (2006.01) H01L 21/26 (2006.01) H01L 21/28 (2006.01) H01L 21/283 (2006.01) H01L 21/31 (2006.01)

Patent

CA 2149645

2149645 9411787 PCTABS00032 There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of a compound which degrades into a deposit and a residue when a radiant beam (e.g. a laser beam) or a particle beam (e.g. an electron beam) is applied. The residue and any unreacted compound may be washed off the substrate to which it has been applied. Nanoscale dimensions of the deposit can be achieved. A particularly suitable organometallic compound is tetra-sec butyl diaurum difluoride.

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