G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 5/00 (2006.01)
Patent
CA 2726505
To produce a memory which resists ion or photon attack, a memory structure is chosen whose memory point behaves asymmetrically with regard to these attacks. It is shown that in this case, it is sufficient to have a reference cell for an identical and periodic storage structure in order to be able to correct all the memory cells assailed by an attack. An error correction efficiency of 1/2 is thus obtained, with a simple redundancy, whereas the conventional methods make provision, for the same result, to triple the storage, to obtain a less beneficial efficiency of 1/3.
Pour réaliser une mémoire qui résiste aux agressions ioniques ou photoniques, on choisit une structure mémoire dont le point mémoire est à comportement dissymétrique à l'égard de ces agressions. On montre que dans ce cas, il suffit d'avoir une cellule de référence pour une structure de mémorisation identique et périodique pour pouvoir corriger toutes les cellules mémoires atteintes par une agression. On obtient ainsi un rendement de correction d'erreur de 1/2, avec une simple redondance, alors que les procédé classique prévoient pour un même résultat de tripler le stockage, d'avoir un rendement moins intéressant de 1/3.
Bougerol Antonin
Carriere Thierry
Miller Florent
Astrium Sas
Bcf Llp
European Aeronautic Defence And Space Company - Eads France
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