Method of diffusing impurities in semiconductor bodies

Details Method of diffusing impurities in semiconductor bodies Method of diffusing impurities in semiconductor bodies

C - Chemistry, Metallurgy

30

B

148/3

C30B 1/00 (2006.01) H01L 21/00 (2006.01) H01L 21/223 (2006.01)

Patent

CA 1061225

ABSTRACT: A method of diffusing doping impurities in semi- conductor bodies by the transfer in the vapour phase from a source in a condensed form. The diffusion space is of the "half-open type" and a cold point is maintained in it at the end opposite to the location of the source which is placed near a restricted passage to the atmosphere surrounding the space. Application: semiconductors of the III-V type. -14-

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