Method of diffusion of impurities

Details Method of diffusion of impurities Method of diffusion of impurities

C - Chemistry, Metallurgy

30

B

148/3

C30B 31/06 (2006.01) B44C 1/22 (2006.01) H01L 21/033 (2006.01) H01L 21/223 (2006.01) H01L 21/383 (2006.01)

Patent

CA 1263932

ABSTRACT OF THE DISCLOSURE A method for selectively diffusing impurities such as zinc into the substrate of a compound semiconductor such as gallium arsenide (GaAs). The method makes use of a diffusion mask in such a manner that the thickness of the oxygen-containing layer at the interface between the diffusion mask and the semiconductor substrate is less than 20 .ANG. so that the abnormal transverse diffusion that would otherwise occur at the interface in the vicinity of the opening of the diffusion mask on the semiconductor surface is suppressed. The result is an increased accuracy in the diffusion pattern of the impurities.

496260

Affiliated with

Also associated with

Rating

Method of diffusion of impurities does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of diffusion of impurities, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of diffusion of impurities will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1278605