Method of doping impurity into semiconductor films and...

Details Method of doping impurity into semiconductor films and... Method of doping impurity into semiconductor films and...

H - Electricity

01

L

356/177

H01L 21/38 (2006.01) H01L 21/02 (2006.01) H01L 21/225 (2006.01) H01L 21/3215 (2006.01)

Patent

CA 2031251

ABSTRACT A patterned semiconductor strip is provided on a substrate. An inert coating is removed from a surface of the semiconductor strip to expose an active surface. A source gas containing an impurity component is applied to the exposed active surface, whereat an impurity film containing the impurity component is adsorbed. The substrate is heated to diffuse the impurity component from the impurity film into the semiconductor strip and to activate the diffused impurity component.

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