Method of epitaxially growing compound semiconductor materials

Details Method of epitaxially growing compound semiconductor materials Method of epitaxially growing compound semiconductor materials

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 25/02 (2006.01) C30B 25/10 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1301035

87-3-255 CN METHOD OF EPITAXIALLY GROWING COMPOUND SEMICONDUCTOR MATERIALS ABSTRACT Method of MOVPE growing a compound semiconductor material, for example GaAs, on a substrate, for example Si. Sodium ions are first introduced onto the substrate surface as by immersing it in a cleaning solution containing sodium. A two-step MOVPE process is then employed to grow device quality single crystal compound semiconductor material on the surface of the substrate.

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