Method of etching

Details Method of etching Method of etching

H - Electricity

01

L

356/164

H01L 21/302 (2006.01) H01L 21/033 (2006.01) H01L 21/3065 (2006.01) H01L 21/311 (2006.01) H01L 21/3213 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1155973

ABSTRACT A method of manufacturing a semiconductor device having a multi-layer structure comprises the steps of patterning in accordance with a predetermined pattern a thin film of photoresist formed on a film to be etched which has been formed on a semiconductor substrate, etching the film to be etched partly by an isotropic etching using said patterned film as a mask, etching the film to be etched completely by an anisotropic etching in the direction of its depth, and forming to the etched film a pattern having tapered or inclined sides. These isotropic and anisotropic etchings may be carried out in the same apparatus by changing reactive gases used in these etchings and conditions of each etching such as the amount of gas, gas pressure and radio frequency power to be applied.

365656

Affiliated with

Also associated with

Rating

Method of etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1066192