Method of etching aluminum alloys in semiconductor wafers

Details Method of etching aluminum alloys in semiconductor wafers Method of etching aluminum alloys in semiconductor wafers

H - Electricity

01

L

204/96.05, 148/3

H01L 21/306 (2006.01) C23F 1/12 (2006.01) C23F 4/00 (2006.01) H01L 21/48 (2006.01)

Patent

CA 1290224

71493-25 Abstract A plasma etching technique for producing tapered side walls on the desired Aluminum conductor pattern is described. This involves forming a resist pattern on the Aluminum layer of a wafer and carrying out a first etching step using Cl2, BCl3 and CF4 at predetermined flow rates and low pressure until all the exposed Aluminum is removed. At the end of this step the Aluminum side walls are virtually vertical and facets are present on the resist. A second etching step is carried out under essentially the same conditions as before except that the Cl2 is reduced. During this etching step the facets on the resist are propagated laterally while the Aluminum side walls become tapered. According to modifications a rounded or jogged configuration can be obtained on the side walls but these too are considered generally tapered in nature as they progress from a wider base to a narrower peak.

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