Method of etching ferroelectric material

Details Method of etching ferroelectric material Method of etching ferroelectric material

C - Chemistry, Metallurgy

23

F

C23F 1/02 (2006.01) G02B 6/134 (2006.01) G02B 6/136 (2006.01) G02B 6/12 (2006.01)

Patent

CA 2385532

A method of etching a ferrolectric material is disclosed whereby a single layer of ions is implanted into a surface of the film and then, without first annealing the substrate, the material between that surface and the layer of ion implantation is etched away. Such a method has the benefit of being faster and much less costly as compared to prior art methods. A single ion implantation of sufficient energy causes a high level of electronic damage near the surface of the material and a high level of crystalline damage at the ion implant level. While it is well known that crystalline damage greatly increases the etch rate of a ferroelectric material, the inventors have discovered that the aforementioned electronic damage also substantially increases the etch rate of the material. Since damaged lithium niobate etches at a much faster rate then undamaged lithium niobate, no annealing is necessary to create an etch stop. Additionally, since there is sufficient damage, either electronic or nuclear, continuously from the surface of the material to the implant layer, multiple ion layer implantations are not necessary.

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