Method of etching refractory metal film on semiconductor...

Details Method of etching refractory metal film on semiconductor... Method of etching refractory metal film on semiconductor...

H - Electricity

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H01L 21/306 (2006.01) C23F 1/10 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1217119

A METHOD OF ETCHING REFRACTORY METAL FILM ON SEMICONDUCTOR STRUCTURES Abstract of the Disclosure A method is disclosed of etching a refractory metal layer on a semiconductor structure comprising subjecting it to a mixture of a Lewis base and an oxidizing agent. In the preferred embodiment a method is described for etching a tungsten-titanium layer on a semiconductor structure by immersing it in a mixture of triethylamine and hydrogen peroxide.

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